Semiconductor & MEMS Foundry
CCD, Analog/Mixed Signal and Legacy CMOS Processes
In addition to fabricating high performance CCD image sensors for DALSA’s own industrial and professional imaging divisions, DALSA Semiconductor is one of the few open CCD foundries in the world. Some of DALSA’s most public successes come from our CCDs.
NASA used “perfect”, zero-defect CCDs from our foundry on the Mars Rovers to capture the highest resolution images ever taken from another planet. The US Naval Observatory uses a wafer-scale monolithic 111 megapixel CCD from our foundry for astronomy, and in 2008 we delivered gigantic devices with even higher resolution for aerial photogrammetry. DALSA CCDs captured stunning 180 fps HD images at the Beijing Olympics, and advanced DALSA CCDs inspect almost every flat panel screen you see around you.
Our vast process repertoire also includes some very specialized and very important analog and mixed signal designs including circuits for pacemakers.
Applications such as these, while only small parts of our business, serve to illustrate not only DALSA’s adaptability and extensive breadth of technical capability but also our ability to reliably meet the very highest standards in the most mission-critical applications. With over 30 process transfers corresponding to over 140 products since 1997, our expertise in transferring and developing customized processes is unmatched in the industry. Put our technical and logistical sophistication to work for you.
CCD Process
DALSA Semiconductor's 150mm C25 2.5µm CCD process offers buried channel or surface channel operation at up to 15 volts with either two or three polysilicon layers. A modular processing approach allows our foundry customers to adjust process parameters for the most demanding requirements on CTE, charge storage capacity and low dark current. Scanner photolithography permits integration of wafer scale devices. We offer advanced technology such as stitching for large devices and more.
DALSA is proud that our base process is fully tunable. Customers specify the buried channel and barrier implants that suit the application. Channel stops, anti-blooming implants, or other special features can be added. Successful projects have included PMOS CCDs for radiation hardness, the world's higest resolution monolithic device (10.5k x 10.5k, 111 megapixels), and high-resistivity devices.
Typical applications for these products are in scientific, industrial, or even space deployments. Custom variants of this process supply many of the image sensors
used in the industry-leading digital cameras of DALSA Corporation's Machine Vision division. NASA's JPL chose DALSA to fabricate the image sensors
on the Mars Rovers, which captured the highest-resolution images ever taken of another planet.
To support all our customers' custom CCD processes, we offer a wide range of services from mask manufacturing to complete device characterization.
DALSA Semiconductor operates its CCD Wafer Foundry Service as an independent arm from any of the other DALSA Corporation group of Business Units. Customer information and data confidentialty is assured.
Process Capability Parameters
| C25 CCD Process Spec | |
| Datasheet |  C25 Datasheet |
| Wafer Size | 150 mm (Max. die 10x10 cm) |
| Poly Layers | 2 or 3 |
| Poly Overlaps | 0.5 µm |
| Metal | Single / Double / Triple |
| Projection Aligner | 2.5 µm 1X (MPA-600) |
| Maximum Operating Voltage | 15 V |
| Charge Transfer Efficiency (CTE) | > 99.999% |
| Dark Current | Low (< 1nA/cm2 ) |
| Other |
|
| Special Options |
|
Support Data
- Design Rules: CCD 2.5, 3.0 µm NMOS Buried-Channel Double/Triple-Poly, Double/Triple Metal Process. New updated design rules available, with significantly expanded details and capabilities. Contact DALSA Semiconductor to receive the expanded document.
Legacy CMOS Processes
DALSA Semiconductor has maintained manufacturing capability for many legacy processes. Our expertise in flexible manufacturing ensures clients are able to maintain a technology path with older technologies for many years, especially for difficult analog and mixed-signal designs.
We can transfer your existing designs onto DALSA Semiconductor CMOS, making the process modifications necessary to replicate the performance of these products. Our design rules are carefully defined to ease portability.
| Process | C08C | C12C | C15 A/B/C |
C20 B/C |
C30 B/C/D |
C40C |
| Datasheet |
C08C |
C12C |
C15 |
C20 |
C30 |
C40C |
| Geometry | 0.8µm | 1.2µm | 1.5µm | 2µm | 3µm | 4µm |
| Voltage | 3-5 | 5 | 1.2,3,5 | 3,5 | 5,10 | 5-10 |
| Poly Layers | 1-2 | 1-2 | 1-2 | 1-2 | 1-2 | 1-2 |
| Metal Layers | 1-3 | 1-3 | 1-3 | 1-2 | 1-2 | 1-2 |
| Wafer Size | 6" | 6" | 6" | 6" | 6" | 6" |
Implantation
Ion implantation is the standard method for the doping of silicon in CMOS/CCD technologies. We offer the following capabilities:
- in the 1E11-1E14 at/cm² range, implantation of boron, phosphorus and arsenic in the 5-500 keV range
- in the 1E14-1E17 at/cm² range, implantation of boron, phosphorus and arsenic in the 5-200 keV range
Other capabilities can be developed upon request.
Features
In 2006 DALSA fabricated the world's highest-resolution monolithic image sensor (111 megapixels)
Highlights of our tunable process include low dark current, excellent CTE, and very good yield.
- stitched, wafer-scale devices
- high resistivity
- PMOS CCD for radiation hardness
Design Support
DALSA Semiconductor provides support to the design community through the supply of design kits for UNIX and PC environments. Individual high voltage DMOS and PMOS components are supplied as gds files with sub-circuit models to enable true performance to be incorporated into the design phase.
For more information contact the sales team at DALSA Semiconductor:
Tel: +01 450 534 2321
Tel: +01 800 718 9701
e-mail: sales.semi@dalsa.com
For more information, contact Sales.